Growth and properties of AlSbBi thin films by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2019

AlSbBi thin films with a Bi content up to 15% have been successfully grown by molecular beam epitaxy for the first time. The effect of growth temperature, Sb flux and Bi flux on Bi incorporation are systematically studied. The incorporation of small size Al atoms is proven to be beneficial to improve the stability of AlSbBi with no change of Bi content in the growth temperature range of 360–420 °C. The AlBi lattice constant is determined to be about 6.37 Å by the combination of Rutherford backscattering spectroscopy and high resolution X-ray diffraction. The new AlBi vibration modes located at 286 cm−1 and 295 cm−1 are observed and attributed to AlBi TO and LO mode, respectively, in agreement with theoretical simulations.

Molecular beam epitaxy AlSbBi Bi incorporation Raman spectra


Xiaolei Zhang

ShanghaiTech University

Chinese Academy of Sciences

Yanchao Zhang

Semiconductor Materials Co., Ltd

ShanghaiTech University

L. Yue

Chinese Academy of Sciences

Hao Liang

Chinese Academy of Sciences

Chaodan Chi

Chinese Academy of Sciences

Yufeng Wu

Chinese Academy of Sciences

Xin Ou

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chinese Academy of Sciences

Journal of Alloys and Compounds

0925-8388 (ISSN)

Vol. 801 239-242


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