A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst
Artikel i vetenskaplig tidskrift, 2014

We propose a novel semiconductor compatible path for nano-graphene synthesis using precursors containing C-Br bonding and liquid catalyst. The unique combination of CBr4 as precursor and Ga as catalyst leads to efficient C precipitation at a synthesis temperature of 200 degrees C or lower. The non-wetting nature of liquid Ga on tested substrates limits nano-scale graphene to form on Ga droplets and substrate surfaces at low synthesis temperatures of T <= 450 degrees C and at droplet/substrate interfaces by C diffusion via droplet edges when T >= 400 degrees C. Good quality interface nano-graphene is demonstrated and the quality can be further improved by optimization of synthesis conditions and proper selection of substrate type and orientation. The proposed method provides a scalable and transfer-free route to synthesize graphene/semiconductor heterostructures, graphene quantum dots as well as patterned graphene nano-structures at a medium temperature range of 400-700 degrees C suitable for most important elementary and compound semiconductors.

FILMS

ELECTRONICS

BORON-NITRIDE

TEMPERATURE

PHOTODETECTOR

GROWTH

HIGH-QUALITY

GRAPHITE

Författare

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Q. Gong

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

C. F. Cao

Chinese Academy of Sciences

H. F. Zhou

Chinese Academy of Sciences

J. Y. Yan

Chinese Academy of Sciences

Q. B. Liu

Chinese Academy of Sciences

L. Y. Zhang

Chinese Academy of Sciences

G. Q. Ding

Chinese Academy of Sciences

Z. F. Di

Chinese Academy of Sciences

X. M. Xie

Chinese Academy of Sciences

Scientific Reports

2045-2322 (ISSN)

Vol. 4 4653

Ämneskategorier

Materialteknik

DOI

10.1038/srep04653

Mer information

Senast uppdaterat

2018-05-23