A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst
Journal article, 2014

We propose a novel semiconductor compatible path for nano-graphene synthesis using precursors containing C-Br bonding and liquid catalyst. The unique combination of CBr4 as precursor and Ga as catalyst leads to efficient C precipitation at a synthesis temperature of 200 degrees C or lower. The non-wetting nature of liquid Ga on tested substrates limits nano-scale graphene to form on Ga droplets and substrate surfaces at low synthesis temperatures of T <= 450 degrees C and at droplet/substrate interfaces by C diffusion via droplet edges when T >= 400 degrees C. Good quality interface nano-graphene is demonstrated and the quality can be further improved by optimization of synthesis conditions and proper selection of substrate type and orientation. The proposed method provides a scalable and transfer-free route to synthesize graphene/semiconductor heterostructures, graphene quantum dots as well as patterned graphene nano-structures at a medium temperature range of 400-700 degrees C suitable for most important elementary and compound semiconductors.










Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Q. Gong

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

C. F. Cao

Chinese Academy of Sciences

H. F. Zhou

Chinese Academy of Sciences

J. Y. Yan

Chinese Academy of Sciences

Q. B. Liu

Chinese Academy of Sciences

L. Y. Zhang

Chinese Academy of Sciences

G. Q. Ding

Chinese Academy of Sciences

Z. F. Di

Chinese Academy of Sciences

X. M. Xie

Chinese Academy of Sciences

Scientific Reports

2045-2322 (ISSN)

Vol. 4 4653

Subject Categories

Materials Engineering



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