InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate
Artikel i vetenskaplig tidskrift, 2021
Quantum dot (QD) laser as a light source for silicon optical integration has attracted great research attention because of the strategic vision of optical interconnection. In this paper, the communication band InAs QD ridge waveguide lasers were fabricated on GaAs-on-insulator (GaAsOI) substrate by combining ion-slicing technique and molecular beam epitaxy (MBE) growth. On the foundation of optimizing surface treatment processes, the InAs/In0.13Ga0.87As/GaAs dot-in-well (DWELL) lasers monolithically grown on a GaAsOI substrate were realized under pulsed operation at 20 °C. The static device measurements reveal comparable performance in terms of threshold current density, slope efficiency and output power between the QD lasers on GaAsOI and GaAs substrates. This work shows great potential to fabricate highly integrated light source on Si for photonic integrated circuits.
Författare
Hao Liang
Chinese Academy of Sciences
Tingting Jin
Chinese Academy of Sciences
Chaodan Chi
Chinese Academy of Sciences
Jialiang Sun
Chinese Academy of Sciences
Xiaolei Zhang
Chinese Academy of Sciences
ShanghaiTech University
Tiangui You
Chinese Academy of Sciences
Min Zhou
Chinese Academy of Sciences
Jiajie Lin
Jiaxing University
Shu Min Wang
Chinese Academy of Sciences
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Optics Express
1094-4087 (ISSN) 10944087 (eISSN)
Vol. 29 23 38465-38476Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Annan elektroteknik och elektronik
DOI
10.1364/OE.438678
PubMed
34808899