InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate
Artikel i vetenskaplig tidskrift, 2021

Quantum dot (QD) laser as a light source for silicon optical integration has attracted great research attention because of the strategic vision of optical interconnection. In this paper, the communication band InAs QD ridge waveguide lasers were fabricated on GaAs-on-insulator (GaAsOI) substrate by combining ion-slicing technique and molecular beam epitaxy (MBE) growth. On the foundation of optimizing surface treatment processes, the InAs/In0.13Ga0.87As/GaAs dot-in-well (DWELL) lasers monolithically grown on a GaAsOI substrate were realized under pulsed operation at 20 °C. The static device measurements reveal comparable performance in terms of threshold current density, slope efficiency and output power between the QD lasers on GaAsOI and GaAs substrates. This work shows great potential to fabricate highly integrated light source on Si for photonic integrated circuits.

Författare

Hao Liang

Chinese Academy of Sciences

Tingting Jin

Chinese Academy of Sciences

Chaodan Chi

Chinese Academy of Sciences

Jialiang Sun

Chinese Academy of Sciences

Xiaolei Zhang

Chinese Academy of Sciences

ShanghaiTech University

Tiangui You

Chinese Academy of Sciences

Min Zhou

Chinese Academy of Sciences

Jiajie Lin

Jiaxing University

Shu Min Wang

Chinese Academy of Sciences

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Optics Express

1094-4087 (ISSN)

Vol. 29 23 38465-38476

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1364/OE.438678

PubMed

34808899

Mer information

Senast uppdaterat

2021-11-17