Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
Artikel i vetenskaplig tidskrift, 2013

Photoluminescence (PL) measurements are performed on one GaSb/AlGaSb single-quantum-well (SQW) sample and two dilute-bismuth (Bi) GaSb/AlGaSb SQW samples grown at 360 and 380 °C, at low temperatures and under magnetic fields. Bimodal PL features are identified in the dilute-Bi samples, and to be accompanied by abnormal PL blueshift in the sample grown at 360 °C. The bimodal PL features are found to be from similar origins of band-to-band transition by magneto-PL evolution. Analysis indicates that the phenomenon can be well interpreted by the joint effect of interfacial large-lateral-scale islands and Al/Ga interdiffusion due to Bi incorporation. The interdiffusion introduces about 1-monolayer shrinkage to the effective quantum-well thickness, which is similar to the interfacial islands height, and the both together result in an unusual shallow-terrace-like interface between GaSbBi and AlGaSb. A phenomenological model is established, the Bi content of isoelectronic incorporation and the exciton reduced effective mass are estimated for the GaSbBi sample grown at 380 °C, and a value of about 21 meV/% is suggested for the bandgap bowing rate of GaSbBi. An effective routine is suggested for determining the Bi content and the depth of the shallow-terraces at interface in dilute-Bi SQW structures.

dilute bismide

GaSbBi

photoluminescence

quantum well

interface

MBE

Författare

X Chen

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Liang Zhu

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Wei Lu

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Shaoling Guo

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Jun Shao

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 113 153505-153507 153505

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Materialvetenskap

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1063/1.4801530