Phosphorus and Nitrogen Containing Dilute Bismides
Kapitel i bok, 2019

Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.

Thermal stability

Epitaxial growth

Optical property

Dilute bismide

Structural property

Electronic property

Författare

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chinese Academy of Sciences

Tingting Jin

Chinese Academy of Sciences

Shuyan Zhao

Chinese Academy of Sciences

D. Liang

Beijing University of Posts and Telecommunications (BUPT)

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

Springer Series in Materials Science Volume 285

97-123

Ämneskategorier

Teknisk mekanik

Annan materialteknik

Den kondenserade materiens fysik

DOI

10.1007/978-981-13-8078-5_5

Mer information

Senast uppdaterat

2019-09-24