Phosphorus and Nitrogen Containing Dilute Bismides
Book chapter, 2019
Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.
Thermal stability
Epitaxial growth
Optical property
Dilute bismide
Structural property
Electronic property
Author
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
Tingting Jin
Chinese Academy of Sciences
Shuyan Zhao
Chinese Academy of Sciences
D. Liang
Beijing University of Posts and Telecommunications (BUPT)
P. F. Lu
Beijing University of Posts and Telecommunications (BUPT)
Springer Series in Materials Science
0933-033X (ISSN) 21962812 (eISSN)
Vol. 285 97-123Subject Categories
Applied Mechanics
Other Materials Engineering
Condensed Matter Physics
DOI
10.1007/978-981-13-8078-5_5