Phosphorus and Nitrogen Containing Dilute Bismides
Book chapter, 2019

Phosphorus and nitrogen containing dilute bismides differ from arsenic and antimony containing bismides in that the anions have large differences in atomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.

Thermal stability

Epitaxial growth

Optical property

Dilute bismide

Structural property

Electronic property

Author

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chinese Academy of Sciences

Tingting Jin

Chinese Academy of Sciences

Shuyan Zhao

Chinese Academy of Sciences

D. Liang

Beijing University of Posts and Telecommunications (BUPT)

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

Springer Series in Materials Science Volume 285

97-123

Subject Categories

Applied Mechanics

Other Materials Engineering

Condensed Matter Physics

DOI

10.1007/978-981-13-8078-5_5

More information

Latest update

9/24/2019