Dislocation-induced composition profile in alloy semiconductors
Artikel i vetenskaplig tidskrift, 2010

We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment. (C) 2010 Elsevier Ltd. All rights reserved.

finite-element-method

critical thickness

nanowires

Mechanical properties

quantum-dots

Semiconductors

nanocrystals

Nanostructures

Författare

H. Ye

Beijing University of Posts and Telecommunications (BUPT)

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

Z. Y. Yu

Beijing University of Posts and Telecommunications (BUPT)

D. L. Wang

Beijing University of Posts and Telecommunications (BUPT)

Z. H. Chen

Beijing University of Posts and Telecommunications (BUPT)

Y. M. Liu

Beijing University of Posts and Telecommunications (BUPT)

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Solid State Communications

0038-1098 (ISSN)

Vol. 150 29-30 1275-1278

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/j.ssc.2010.05.023

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Senast uppdaterat

2018-05-23