Dislocation-induced composition profile in alloy semiconductors
Artikel i vetenskaplig tidskrift, 2010
We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment. (C) 2010 Elsevier Ltd. All rights reserved.
finite-element-method
critical thickness
nanowires
Mechanical properties
quantum-dots
Semiconductors
nanocrystals
Nanostructures
Författare
H. Ye
Beijing University of Posts and Telecommunications (BUPT)
P. F. Lu
Beijing University of Posts and Telecommunications (BUPT)
Z. Y. Yu
Beijing University of Posts and Telecommunications (BUPT)
D. L. Wang
Beijing University of Posts and Telecommunications (BUPT)
Z. H. Chen
Beijing University of Posts and Telecommunications (BUPT)
Y. M. Liu
Beijing University of Posts and Telecommunications (BUPT)
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Solid State Communications
0038-1098 (ISSN)
Vol. 150 29-30 1275-1278Ämneskategorier
Elektroteknik och elektronik
DOI
10.1016/j.ssc.2010.05.023