Dislocation-induced composition profile in alloy semiconductors
Journal article, 2010
We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment. (C) 2010 Elsevier Ltd. All rights reserved.
finite-element-method
critical thickness
nanowires
Mechanical properties
quantum-dots
Semiconductors
nanocrystals
Nanostructures
Author
H. Ye
Beijing University of Posts and Telecommunications (BUPT)
P. F. Lu
Beijing University of Posts and Telecommunications (BUPT)
Z. Y. Yu
Beijing University of Posts and Telecommunications (BUPT)
D. L. Wang
Beijing University of Posts and Telecommunications (BUPT)
Z. H. Chen
Beijing University of Posts and Telecommunications (BUPT)
Y. M. Liu
Beijing University of Posts and Telecommunications (BUPT)
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Solid State Communications
0038-1098 (ISSN)
Vol. 150 29-30 1275-1278Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.ssc.2010.05.023