Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017

Growth mode of tensile-strained Ge quantum dots on different III-V buffers by molecular beam epitaxy is studied by a combination of reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy. The Ge-QDs growth on the InAlAs buffer lattice matched to InP and on InAs buffer on GaSb follows the Volmer-Weber growth mode with round Ge QDs and no Ge wetting layer, while it obeys the Stranski-Krastanov growth mode on GaSb, AlSb and AlGaSb on GaSb substrates, showing rectangular shaped platelets and a clear Ge wetting layer. The discovery of the Volmer-Weber growth mode is essential to avoid forming a wetting layer and the subsequent antiphase-domain defects when capping III-Vs on Ge-QDs, important for potential optoelectronic applications.

germanium

quantum dots

growth mode

tensile-strained

Författare

Z. P. Zhang

ShanghaiTech University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

Y. X. Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. M. Chen

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

X. Y. Wu

Chinese Academy of Sciences

Shanghai Jiaotong University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Z. Y. S. Zhu

ShanghaiTech University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

L. Y. Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Physics D: Applied Physics

0022-3727 (ISSN)

Vol. 50

Ämneskategorier

Fysik

DOI

10.1088/1361-6463/aa8bcf