Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017
Growth mode of tensile-strained Ge quantum dots on different III-V buffers by molecular beam epitaxy is studied by a combination of reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy. The Ge-QDs growth on the InAlAs buffer lattice matched to InP and on InAs buffer on GaSb follows the Volmer-Weber growth mode with round Ge QDs and no Ge wetting layer, while it obeys the Stranski-Krastanov growth mode on GaSb, AlSb and AlGaSb on GaSb substrates, showing rectangular shaped platelets and a clear Ge wetting layer. The discovery of the Volmer-Weber growth mode is essential to avoid forming a wetting layer and the subsequent antiphase-domain defects when capping III-Vs on Ge-QDs, important for potential optoelectronic applications.
growth mode
tensile-strained
germanium
quantum dots
Författare
Z. P. Zhang
Chinese Academy of Sciences
ShanghaiTech University
Y. X. Song
Chinese Academy of Sciences
Q. M. Chen
Chinese Academy of Sciences
X. Y. Wu
Chinese Academy of Sciences
Shanghai Jiao Tong University
Z. Y. S. Zhu
Chinese Academy of Sciences
ShanghaiTech University
L. Y. Zhang
Chinese Academy of Sciences
Y. Li
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Journal of Physics D: Applied Physics
0022-3727 (ISSN) 13616463 (eISSN)
Vol. 50 46 465301Ämneskategorier
Fysik
DOI
10.1088/1361-6463/aa8bcf