Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning
Kapitel i bok, 2019

The structural properties of highly mismatched III-V semiconductors with small amounts of Bi are still not well understood at the atomic level. In this chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using density functional theory (DFT) calculations. By comparing high-resolution X-STM images with complementary DFT calculations, Bi atoms down to the third monolayer below the InP (110) surface are identified. With this information, the Short-range ordering of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation at the interfaces of an InP/InP1−xBix/InP quantum well with a Bi concentration of 2.4 % is discussed.


C. M. Krammel

Technische Universiteit Eindhoven

P. M. Koenraad

Technische Universiteit Eindhoven

M. Roy

University Of Leicester

P. A. Maksym

University Of Leicester

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chinese Academy of Sciences

Bismuth-Containing Alloys and Nanostructures; Wang S., Lu, P. (eds.)

978-981-13-8077-8 (ISBN)


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