Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Artikel i vetenskaplig tidskrift, 2014

We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.

Författare

V. Lopes-Oliveira

Universidade Federal de Sao Carlos

L. K. S. Herval

Universidade Federal de Sao Carlos

V. O. Gordo

Universidade Federal de Sao Carlos

D. F. Cesar

Universidade Federal de Sao Carlos

M. P. F. de Godoy

Universidade Federal de Sao Carlos

Y. G. Gobato

Universidade Federal de Sao Carlos

M. Henini

University of Nottingham

A. Khatab

University of Nottingham

Cairo University

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

M. Schmidbauer

Leibniz-Institut f?r Kristallz?chtung

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 116 233703

Ämneskategorier

Fysik

DOI

10.1063/1.4904357