Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Artikel i vetenskaplig tidskrift, 2014
We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.
Författare
V. Lopes-Oliveira
Universidade Federal de Sao Carlos
L. K. S. Herval
Universidade Federal de Sao Carlos
V. O. Gordo
Universidade Federal de Sao Carlos
D. F. Cesar
Universidade Federal de Sao Carlos
M. P. F. de Godoy
Universidade Federal de Sao Carlos
Y. G. Gobato
Universidade Federal de Sao Carlos
M. Henini
University of Nottingham
A. Khatab
Cairo University
University of Nottingham
Mahdad Sadeghi
Chalmers, Mikroteknologi och nanovetenskap, Nanotekniklaboratoriet
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
M. Schmidbauer
Leibniz Institut fur Kristallzuchtung (IKZ)
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 116 23 233703Ämneskategorier
Fysik
DOI
10.1063/1.4904357