Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

V. Lopes-Oliveira; L. K. S. Herval; V. O. Gordo; D. F. Cesar; M. P. F. de Godoy; Y. G. Gobato; M. Henini; A. Khatab; Mahdad Sadeghi; Shu Min Wang; M. Schmidbauer

doi:10.1063/1.4904357

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Journal article, 2014

We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.