Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Journal article, 2014
We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.
Author
V. Lopes-Oliveira
Federal University of São Carlos
L. K. S. Herval
Federal University of São Carlos
V. O. Gordo
Federal University of São Carlos
D. F. Cesar
Federal University of São Carlos
M. P. F. de Godoy
Federal University of São Carlos
Y. G. Gobato
Federal University of São Carlos
M. Henini
University of Nottingham
A. Khatab
Cairo University
University of Nottingham
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
M. Schmidbauer
Leibniz Institut fur Kristallzuchtung (IKZ)
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 116 23 233703Subject Categories (SSIF 2011)
Physical Sciences
DOI
10.1063/1.4904357