Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Journal article, 2014

We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state.

Author

V. Lopes-Oliveira

Universidade Federal de Sao Carlos

L. K. S. Herval

Universidade Federal de Sao Carlos

V. O. Gordo

Universidade Federal de Sao Carlos

D. F. Cesar

Universidade Federal de Sao Carlos

M. P. F. de Godoy

Universidade Federal de Sao Carlos

Y. G. Gobato

Universidade Federal de Sao Carlos

M. Henini

University of Nottingham

A. Khatab

Cairo University

University of Nottingham

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

M. Schmidbauer

Leibniz-Institut f?r Kristallz?chtung

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 116 23 233703

Subject Categories

Physical Sciences

DOI

10.1063/1.4904357

More information

Latest update

9/6/2018 1