Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Journal article, 2014
Author
V. Lopes-Oliveira
Universidade Federal de Sao Carlos
L. K. S. Herval
Universidade Federal de Sao Carlos
V. O. Gordo
Universidade Federal de Sao Carlos
D. F. Cesar
Universidade Federal de Sao Carlos
M. P. F. de Godoy
Universidade Federal de Sao Carlos
Y. G. Gobato
Universidade Federal de Sao Carlos
M. Henini
University of Nottingham
A. Khatab
Cairo University
University of Nottingham
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
M. Schmidbauer
Leibniz-Institut f?r Kristallz?chtung
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 116 23 233703Subject Categories
Physical Sciences
DOI
10.1063/1.4904357