Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response
Journal article, 2014
Author
V. Lopes-Oliveira
Federal University of São Carlos
L. K. S. Herval
Federal University of São Carlos
V. O. Gordo
Federal University of São Carlos
D. F. Cesar
Federal University of São Carlos
M. P. F. de Godoy
Federal University of São Carlos
Y. G. Gobato
Federal University of São Carlos
M. Henini
University of Nottingham
A. Khatab
Cairo University
University of Nottingham
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
M. Schmidbauer
Leibniz Institut fur Kristallzuchtung (IKZ)
Published in
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 116 Issue 23 art. no 233703Categorizing
Subject Categories (SSIF 2011)
Physical Sciences
Identifiers
DOI
10.1063/1.4904357