Structural and electronic properties of wurtzite GaX (X = N, P, As, Sb, Bi) under in-plain biaxial strains
Artikel i vetenskaplig tidskrift, 2014

Using first-principles density functional theory, we have investigated the structural and electronic properties of GaX (X N, P, As, Sb, Bi) systems under in-plain biaxial strains. All GaX systems transfer from the typical wurtzite to pseudographitic phases when the in-plane tensile strains are large enough. Our findings indicate that the elastic stiffness coefficients have a direct correlation with the strains. The variations of the band gap energy are diverse with respect to the compressive and tensile biaxial strains. For tensile biaxial strains, the band gap decreases substantially as the increasing of the strains. Upon compressive biaxial strains, the band gap initially increases, and then undergoes a decline. In addition, we find that there exists an indirect to direct band gap transition of GaP at certain in-plane biaxial strains. These results give a good understanding of strain-based GaX series heteroepitaxy thin films. (C) 2014 Elsevier Ltd. All rights reserved.

GENERALIZED GRADIENT APPROXIMATION

Electronic structure modulations

SOLIDS

First-principles

Biaxial strain

ELASTIC-CONSTANTS

Pseudographitic

GROWTH

Författare

H. W. Cao

Beijing University of Posts and Telecommunications (BUPT)

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

X. L. Zhang

Beijing University of Posts and Telecommunications (BUPT)

Z. Y. Yu

Beijing University of Posts and Telecommunications (BUPT)

L. H. Han

Beijing University of Posts and Telecommunications (BUPT)

J. Chen

Beijing Applied Physics and Computational Mathematics

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Superlattices and Microstructures

0749-6036 (ISSN) 1096-3677 (eISSN)

Vol. 67 25-32

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.spmi.2013.12.016