Structural properties of GeSn thin films grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017
GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties were analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction (XRD). The lateral correlation length (LCL) and the mosaic spread (MS) were extracted for the epi-layer peaks in the asymmetric (224) diffraction. With the increase of Sn concentration, the LCL reduces while the MS increases, indicating degrading crystalline quality. Dislocations were observed in the sample with 7.62% Sn concentration by transmission electron microscope, consistent with the strain relaxation found in XRD mapping. Besides, the surface morphologies were investigated.
Författare
Z. P. Zhang
ShanghaiTech University
Chinese Academy of Sciences
Y. X. Song
Chinese Academy of Sciences
Z. Y. S. Zhu
Chinese Academy of Sciences
ShanghaiTech University
Y. Han
Chinese Academy of Sciences
Q. M. Chen
Chinese Academy of Sciences
Y. Li
Chinese Academy of Sciences
L. Y. Zhang
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
AIP Advances
2158-3226 (ISSN) 21583226 (eISSN)
Vol. 7 4 Article number 045211- 045211Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier
Nanoteknik
DOI
10.1063/1.4982245