Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2016

We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(G) and LO(G) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(G) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.

gaas1-xbix

si

band-gap

alloys

Physics

ge

Författare

P. Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

W. W. Pan

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

X. Y. Wu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

C. F. Cao

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Q. Gong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Applied Physics Express

1882-0778 (ISSN)

Vol. 9

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.7567/apex.9.045502