Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy
Journal article, 2016

We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(G) and LO(G) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(G) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.

si

Physics

gaas1-xbix

ge

band-gap

alloys

Author

P. Wang

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

X. Y. Wu

Chinese Academy of Sciences

C. F. Cao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Q. Gong

Chinese Academy of Sciences

Applied Physics Express

18820778 (ISSN) 18820786 (eISSN)

Vol. 9 4

Subject Categories

Condensed Matter Physics

DOI

10.7567/apex.9.045502

More information

Latest update

5/23/2018