Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of similar to 180 degrees C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six < 110 > growth orientations were observed on Ge (110) by the VSS growth at similar to 180 degrees C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.
Författare
Z Zhu
ShanghaiTech University
Chinese Academy of Sciences
Y Song
Chinese Academy of Sciences
Z. Zhang
ShanghaiTech University
Chinese Academy of Sciences
H Sun
Chinese Academy of Sciences
Y Han
Chinese Academy of Sciences
Y Li
Chinese Academy of Sciences
L Zhang
Chinese Academy of Sciences
Z Xue
Chinese Academy of Sciences
Z Di
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 122 9 94304- 094304Ämneskategorier
Nanoteknik
DOI
10.1063/1.4990602