Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of similar to 180 degrees C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six < 110 > growth orientations were observed on Ge (110) by the VSS growth at similar to 180 degrees C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.

Författare

Z Zhu

ShanghaiTech University

Chinese Academy of Sciences

Y Song

Chinese Academy of Sciences

Z. Zhang

ShanghaiTech University

Chinese Academy of Sciences

H Sun

Chinese Academy of Sciences

Y Han

Chinese Academy of Sciences

Y Li

Chinese Academy of Sciences

L Zhang

Chinese Academy of Sciences

Z Xue

Chinese Academy of Sciences

Z Di

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 122 9 94304- 094304

Ämneskategorier

Nanoteknik

DOI

10.1063/1.4990602