Valence band anticrossing in InP1-xBix
Paper i proceeding, 2015
The bandgap bowing trend in InP 1-x Bi x have been studied in the framework of the valence-band anticrossing model. The alloys exhibit a strong reduction in the band gap and an increase in the spin-orbit splitting energy with increasing Bi concentration. © 2015 OSA.
Författare
L. Wu
Beijing University of Posts and Telecommunications (BUPT)
L. Han
Beijing University of Posts and Telecommunications (BUPT)
X. Li
Beijing University of Posts and Telecommunications (BUPT)
P. F. Lu
Beijing University of Posts and Telecommunications (BUPT)
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Asia Communications and Photonics Conference, ACPC 2015, Hong Kong, 19-23 November
978-194358006-4 (ISBN)
Ämneskategorier
Den kondenserade materiens fysik
DOI
10.1364/acpc.2015.asu2a.16