Bismuth alloying properties in GaAs nanowires
Artikel i vetenskaplig tidskrift, 2013

First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga31As31 nanowires is introduced for its reasonable band gap. The band gap of GaAs1-xBix shrinks clearly with the increasing Bi concentration and the band edge shifts when spin-orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations.

Optical properties

GaAsBi nanowires

Electronic structure

Författare

L. Ding

P. F. Lu

H. W. Cao

N. N. Cai

Z. Y. Yu

T. Gao

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Solid State Chemistry

0022-4596 (ISSN) 1095-726X (eISSN)

Vol. 205 44-48

Ämneskategorier

Oorganisk kemi

DOI

10.1016/j.jssc.2013.07.005

Mer information

Skapat

2017-10-06