Novel group IV nano- and micro-structures for light sources on silicon
Paper i proceeding, 2017

We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical point, and partially suspended GeSn microstructures were fabricated for relaxing the compressive strain.

Författare

[Person 8c8e4f35-5e40-405a-a7a0-7c82f97d5b49 not found]

Chinese Academy of Sciences

[Person 6e58567b-a171-49cf-b540-806085a59952 not found]

Chinese Academy of Sciences

[Person 8b38ffae-df3d-4546-be3d-2b95aaa88c42 not found]

Chinese Academy of Sciences

[Person 3f9a0d0d-3e2a-4347-bb97-9f924d65748d not found]

ShanghaiTech University

Chinese Academy of Sciences

[Person bad9b37b-3489-49d8-b607-1d6ecf688b52 not found]

ShanghaiTech University

Chinese Academy of Sciences

[Person 44ec6970-06ef-406a-a536-79b6af6a427b not found]

Chinese Academy of Sciences

[Person 538593ae-7a75-4df7-ae53-ab29bc85902f not found]

Chinese Academy of Sciences

[Person 34ff7880-7fcb-4712-94e4-77094f7cdabc not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017; San Juan Marriott ResortSan Juan; Puerto Rico; 10 July 2017 through 12 July 2017

43-44

Ämneskategorier

Nanoteknik

DOI

10.1109/PHOSST.2017.8012642

ISBN

978-150906570-7

Mer information

Senast uppdaterat

2018-05-23