Electronic and magnetic properties of vanadium doped AlN nanosheet under in-plane biaxial strains
Artikel i vetenskaplig tidskrift, 2014

First-principles calculations have been performed to investigate the electronic and magnetic properties of V-doped AlN nanosheet under in-plane biaxial strains. It is found that V atom favors to substitute for Al site with the lowest formation energy. The magnetic coupling of three different configurations are studied and configuration I is demonstrated to possess room temperature ferromagnetism. The stable ferromagnetic coupling is mediated by double exchange mechanism. In addition, the in-plane biaxial strains corresponding to tensile and compressive strains can affect and manipulate the magnetic interaction of V-doped AlN nanosheet in different ways. These results are conductive to design AlN based two dimensional diluted magnetic semiconductors.

Biaxial strains

ZNO

CR

1ST-PRINCIPLES

First-principles

Magnetic properties

AlN nanosheet

Spintronic

Författare

H. W. Cao

Ministry of Education China

P. F. Lu

Ministry of Education China

Z. Y. Yu

Ministry of Education China

J. Chen

Beijing Applied Physics and Computational Mathematics

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Superlattices and Microstructures

0749-6036 (ISSN) 1096-3677 (eISSN)

Vol. 73 113-120

Ämneskategorier

Fysik

DOI

10.1016/j.spmi.2014.05.020