Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2014

InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

Absorption

InPBi

Photoluminescence

HRXRD

Molecular beam epitaxy

Författare

Yi Gu

Chinese Academy of Sciences

K. Wang

Chinese Academy of Sciences

H. Zhou

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

C. F. Cao

Chinese Academy of Sciences

L. Zhang

Chinese Academy of Sciences

Y. Zhang

Chinese Academy of Sciences

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Nanoscale Research Letters

1931-7573 (ISSN) 1556-276X (eISSN)

Vol. 9 24

Ämneskategorier

Fysik

DOI

10.1186/1556-276X-9-24