Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017

The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%. (C) 2017 The Japan Society of Applied Physics






S. X. Zhou

Xinjiang Technical Institute of Physics and Chemistry

Chinese Academy of Sciences

M. Qi

Chinese Academy of Sciences

L. K. Ai

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

A. H. Xu

Chinese Academy of Sciences

Q. Guo

Xinjiang Technical Institute of Physics and Chemistry

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 56 3 035505


Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)





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