Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy
Journal article, 2017

The effects of Bi flux and In/Ga ratio on Bi incorporation and electrical properties of InGaAsBi grown by gas source molecular beam epitaxy were systematically studied. It is found that use of a low In/Ga ratio has an enhancement effect on the incorporation of Bi and its content increases linearly with Bi flux until reach a saturation. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but does not degrade the electron mobility for the Bi content up to 6.2%. Up to 7.5% of Bi incorporation has been confirmed by Rutherford backscattering spectroscopy (RBS) and a maximum electron mobility of 5600 cm(2)& V-1.s(-1) at room temperature was achieved in InGaAsBi with x(Bi) = 6.2%, which is the highest value reported in InGaAsBi with x(Bi) > 5%. (C) 2017 The Japan Society of Applied Physics

bi

Physics

alloy

low-temperature

Author

S. X. Zhou

Xinjiang Technical Institute of Physics and Chemistry

Chinese Academy of Sciences

M. Qi

Chinese Academy of Sciences

L. K. Ai

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

A. H. Xu

Chinese Academy of Sciences

Q. Guo

Xinjiang Technical Institute of Physics and Chemistry

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 56 3

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Nano Technology

DOI

10.7567/jjap.56.035505

More information

Latest update

5/23/2018