InPBi Single Crystals Grown by Molecular Beam Epitaxy
Artikel i vetenskaplig tidskrift, 2014
InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V 5 P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 +/- 0.4% with 94 +/- 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 mmwhich can't be explained by the existing theory.
GAP
ALLOYS
AN PJ
SOLID STATE COMMUNICATIONS
BI
Multidisciplinary Sciences
EMISSION
PHOSPHIDE
V9
ABSORPTION
GAASN
1971
BISMUTH
P1555
Författare
K. Wang
Chinese Academy of Sciences
Yi Gu
Chinese Academy of Sciences
H. F. Zhou
Chinese Academy of Sciences
L. Y. Zhang
Chinese Academy of Sciences
C. Z. Kang
Qufu Normal University
M. J. Wu
Paul Drude Institut fur Festkorperelektronik
W. W. Pan
Chinese Academy of Sciences
P. F. Lu
Beijing University of Posts and Telecommunications (BUPT)
Q. Gong
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Scientific Reports
2045-2322 (ISSN) 20452322 (eISSN)
Vol. 4 5449Ämneskategorier
Nanoteknik
DOI
10.1038/srep05449