InPBi Single Crystals Grown by Molecular Beam Epitaxy
Artikel i vetenskaplig tidskrift, 2014

InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V 5 P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 +/- 0.4% with 94 +/- 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 mmwhich can't be explained by the existing theory.

GAP

ALLOYS

AN PJ

SOLID STATE COMMUNICATIONS

BI

Multidisciplinary Sciences

EMISSION

PHOSPHIDE

V9

ABSORPTION

GAASN

1971

BISMUTH

P1555

Författare

K. Wang

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

H. F. Zhou

Chinese Academy of Sciences

L. Y. Zhang

Chinese Academy of Sciences

C. Z. Kang

Qufu Normal University

M. J. Wu

Paul Drude Institut fur Festkorperelektronik

W. W. Pan

Chinese Academy of Sciences

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Scientific Reports

2045-2322 (ISSN)

Vol. 4 5449

Ämneskategorier

Nanoteknik

DOI

10.1038/srep05449