Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure
Artikel i vetenskaplig tidskrift, 2016

InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift.

Finite element

Quantum dots

AFM

TEM

InAs/InGaAs

Photoluminescence

InGaAs matrix

Dot-in-well

Författare

P. Wang

Chinese Academy of Sciences

Q. M. Chen

Chinese Academy of Sciences

X. Y. Wu

Chinese Academy of Sciences

C. F. Cao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Q. Gong

Chinese Academy of Sciences

Nanoscale Research Letters

1931-7573 (ISSN) 1556-276X (eISSN)

Vol. 11 1 Article Number: 119- 119

Ämneskategorier

Materialteknik

Styrkeområden

Materialvetenskap

DOI

10.1186/s11671-016-1339-3

PubMed

26932758

Mer information

Senast uppdaterat

2018-05-23