Dark Current Characteristic of p-i-n and nBn MWIR InAs/GaSb Superlattice Infrared Detectors
Paper i proceeding, 2019

The theoretical dark current model of InAs/GaSb type II superlattice (T2SL) p-i-n and nBn photodetectors is presented. The nBn structure was designed to suppress generation-recombination (G-R), surface leakage and tunnel currents. 8 band k p model including the conduction and valence band mixing was applied to calculate the band structure and optical transition of InAs/GaSb T2SL. Theoretical calculations are performed for different doping level of p-i-n and nBn detectors. For p-i-n detector, dark current was studied for different p-contact layer doping and different absorber layer doping. For nBn detector, different contact doping concentration and absorb doping concentration was studied. At low temperature, dark current of p-i-n detector was dominant by generation-recombination and tunnel current, nBn structure can inhibit tunnel and generation-recombination current. At high temperature, the dark current of p-i-n detector and nBn detector have the same order of magnitude and are both dominated by diffusion current. Quantum efficiency and resistance-area product of p-i-n and nBn detectors were also calculated at 120 K, quantum efficiency of p-i-n detector is a bit larger than nBn detector, but dark current and resistance area product of nBn detector are better.

Dark Current

Infrared Detector

InAs/GaSb T2SL

Författare

Yang Li

Beijing University of Posts and Telecommunications (BUPT)

Wenliang Xiao

Beijing University of Posts and Telecommunications (BUPT)

Liyuan Wu

Beijing University of Posts and Telecommunications (BUPT)

Xiumin Xie

Southwest Institute of Technical Physics

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

2019 4th Optoelectronics Global Conference, OGC 2019

70-75 8925152

4th Optoelectronics Global Conference, OGC 2019
Shenzhen, China,

Ämneskategorier

Atom- och molekylfysik och optik

Den kondenserade materiens fysik

DOI

10.1109/OGC.2019.8925152

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Senast uppdaterat

2020-01-29