Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy
Artikel i vetenskaplig tidskrift, 2017

Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that of the GaSb, inferring as large as 7.74% tensile strain in the Ge nanostructures.

nanostructure

tensile-strained Ge

scanning tunneling microscopy

Författare

Y. Li

Shanghai University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. X. Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Z. P. Zhang

ShanghaiTech University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. M. Chen

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

F.X.Zha

Shanghai University

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Materials Research Express

2053-1591 (eISSN)

Vol. 4 Article nr 045907 -

Ämneskategorier

Nanoteknik

DOI

10.1088/2053-1591/aa6bbf