Wavelength tuning of InAs quantum dot laser by micromirror device
Artikel i vetenskaplig tidskrift, 2015

We report on the InAs quantum dot (QD) external cavity laser (ECL) using a digital mirror device (DMD) as the key component for wavelength tuning. The InAs QD laser diode was grown by gas source molecular-beam epitaxy, which had a broad gain profile. Single mode operation was achieved with the side mode suppression ratio of 21 dB when the optical feedback was provided by a mirror pattern consisting of 9 micromirrors. Moreover, two-color lasing was demonstrated with two laser lines having frequency difference in the THz range. The incorporation of DMD in the ECL enables great flexibility and many unique features, such as high tuning speed independent of the tuning step, two-color or multicolor lasing, and adjustable intensity for individual laser lines. (C) 2015 Elsevier B.V. All rights reserved.



Gallium compounds

Laser diode

Molecular beam epitaxy

Materials Science

Semiconducting Gallium Arsenide




J. Y. Yan

Q. Gong

C. Z. Kang

H. X. Xu

C. F. Cao

Y. Li

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

H. L. Wang

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 425 373-375


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