Tunable band gaps in stanene/MoS2 heterostructures
Artikel i vetenskaplig tidskrift, 2017
First-principles calculations have been performed to investigate the geometric and electronic properties of stanene layer paired with monolayer MoS2 substrate with van der Waals corrections. It is found that the stanene can absorb on the monolayer MoS2 substrate forming stanene/MoS2 heterostructures, indicating a weak interface interaction. The Dirac point of stanene is still preserved on MoS2 substrate, and the band gap is opened about 67 meV due to the influence of the substrate. Moreover, the band gap is able to be effectively modulated under an external strain and a perpendicular electric field. These results are helpful for exploring the tunability of the electronic properties of stanene absorbed on semiconducting substrate.
Semiconductors
Monolayer
External Electric-Field
Hetero-Bilayers
Silicene
Mos2
Författare
D. Liang
Beijing University of Posts and Telecommunications (BUPT)
H. He
Beijing University of Posts and Telecommunications (BUPT)
P. F. Lu
Chinese Academy of Sciences
Beijing University of Posts and Telecommunications (BUPT)
L. Wu
Beijing University of Posts and Telecommunications (BUPT)
C. F. Zhang
Beijing Computational Science Research Center
P. F. Guan
Beijing Computational Science Research Center
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Journal of Materials Science
0022-2461 (ISSN) 1573-4803 (eISSN)
Vol. 52 10 5799-5806Ämneskategorier
Nanoteknik
Den kondenserade materiens fysik
DOI
10.1007/s10853-017-0817-z