Tunable band gaps in stanene/MoS2 heterostructures
Artikel i vetenskaplig tidskrift, 2017

First-principles calculations have been performed to investigate the geometric and electronic properties of stanene layer paired with monolayer MoS2 substrate with van der Waals corrections. It is found that the stanene can absorb on the monolayer MoS2 substrate forming stanene/MoS2 heterostructures, indicating a weak interface interaction. The Dirac point of stanene is still preserved on MoS2 substrate, and the band gap is opened about 67 meV due to the influence of the substrate. Moreover, the band gap is able to be effectively modulated under an external strain and a perpendicular electric field. These results are helpful for exploring the tunability of the electronic properties of stanene absorbed on semiconducting substrate.

Semiconductors

Monolayer

External Electric-Field

Hetero-Bilayers

Silicene

Mos2

Författare

D. Liang

Beijing University of Posts and Telecommunications (BUPT)

H. He

Beijing University of Posts and Telecommunications (BUPT)

P. F. Lu

Chinese Academy of Sciences

Beijing University of Posts and Telecommunications (BUPT)

L. Wu

Beijing University of Posts and Telecommunications (BUPT)

C. F. Zhang

Beijing Computational Science Research Center

P. F. Guan

Beijing Computational Science Research Center

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Materials Science

0022-2461 (ISSN) 1573-4803 (eISSN)

Vol. 52 10 5799-5806

Ämneskategorier

Nanoteknik

Den kondenserade materiens fysik

DOI

10.1007/s10853-017-0817-z