Tunable band gaps in stanene/MoS2 heterostructures
Artikel i vetenskaplig tidskrift, 2017
Semiconductors
Monolayer
External Electric-Field
Hetero-Bilayers
Silicene
Mos2
Författare
D. Liang
Beijing University of Posts and Telecommunications (BUPT)
H. He
Beijing University of Posts and Telecommunications (BUPT)
P. F. Lu
Chinese Academy of Sciences
Beijing University of Posts and Telecommunications (BUPT)
L. Wu
Beijing University of Posts and Telecommunications (BUPT)
C. F. Zhang
Beijing Computational Science Research Center
P. F. Guan
Beijing Computational Science Research Center
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Journal of Materials Science
0022-2461 (ISSN) 1573-4803 (eISSN)
Vol. 52 10 5799-5806Ämneskategorier
Nanoteknik
Den kondenserade materiens fysik
DOI
10.1007/s10853-017-0817-z