Tunable band gaps in stanene/MoS2 heterostructures
Journal article, 2017
First-principles calculations have been performed to investigate the geometric and electronic properties of stanene layer paired with monolayer MoS2 substrate with van der Waals corrections. It is found that the stanene can absorb on the monolayer MoS2 substrate forming stanene/MoS2 heterostructures, indicating a weak interface interaction. The Dirac point of stanene is still preserved on MoS2 substrate, and the band gap is opened about 67 meV due to the influence of the substrate. Moreover, the band gap is able to be effectively modulated under an external strain and a perpendicular electric field. These results are helpful for exploring the tunability of the electronic properties of stanene absorbed on semiconducting substrate.
Semiconductors
Monolayer
External Electric-Field
Hetero-Bilayers
Silicene
Mos2
Author
D. Liang
Beijing University of Posts and Telecommunications (BUPT)
H. He
Beijing University of Posts and Telecommunications (BUPT)
P. F. Lu
Chinese Academy of Sciences
Beijing University of Posts and Telecommunications (BUPT)
L. Wu
Beijing University of Posts and Telecommunications (BUPT)
C. F. Zhang
Beijing Computational Science Research Center
P. F. Guan
Beijing Computational Science Research Center
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Journal of Materials Science
0022-2461 (ISSN) 1573-4803 (eISSN)
Vol. 52 10 5799-5806Subject Categories
Nano Technology
Condensed Matter Physics
DOI
10.1007/s10853-017-0817-z