Development of Uni-Travelling-Carrier Photodiodes
Paper i proceeding, 2006

We have fabricated and characterized InGaAsP/InP uni-travelling-carrier photodiodes (UTC-PDs). An UTC-PD layer structure in the material system InGaAlAs/InP was also designed and grown with in-house molecular beam epitaxy (MBE). Using standard III-V processing involving lithography, metallization and etching, diodes of different sizes have been fabricated. Time domain and eye-diagram measurements have been performed. Limitations in the measurement system were identified and compensated for when measuring the bandwidth. The resulting bandwidth is in agreement with the area dependent RC-limitation which was estimated using quasi-DC capacitance-voltage (C-V) measurements.

InP

InGaAs

photodetectors

p-i-n photodiodes

Författare

Josip Vukusic

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Henrik Sunnerud

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Peter Andrekson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågs- och terahertzteknologi

4th ESA Workshop on Millimetre Wave Technology and Applications

Ämneskategorier

Telekommunikation

Annan elektroteknik och elektronik