Development of Uni-Travelling-Carrier Photodiodes
Paper in proceedings, 2006

We have fabricated and characterized InGaAsP/InP uni-travelling-carrier photodiodes (UTC-PDs). An UTC-PD layer structure in the material system InGaAlAs/InP was also designed and grown with in-house molecular beam epitaxy (MBE). Using standard III-V processing involving lithography, metallization and etching, diodes of different sizes have been fabricated. Time domain and eye-diagram measurements have been performed. Limitations in the measurement system were identified and compensated for when measuring the bandwidth. The resulting bandwidth is in agreement with the area dependent RC-limitation which was estimated using quasi-DC capacitance-voltage (C-V) measurements.

InP

InGaAs

photodetectors

p-i-n photodiodes

Author

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Henrik Sunnerud

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Peter Andrekson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

4th ESA Workshop on Millimetre Wave Technology and Applications

Subject Categories

Telecommunications

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/8/2017