A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz
Artikel i vetenskaplig tidskrift, 2007

We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting RF measurements, the maximum output power was 195 mW at 113 GHz, with a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5%.

Frequency multiplier

heterostructure barrier varactor (HBV)

thermal management

semiconductor diodes

terahertz source

high-power operation

millimeter-wave devices

Författare

Josip Vukusic

Chalmers, Teknisk fysik, Fysikalisk elektronik

Tomas Bryllert

Chalmers, Teknisk fysik, Fysikalisk elektronik

Arezoo Emadi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Jan Stake

Chalmers, Teknisk fysik, Fysikalisk elektronik

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 28 340-342

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

DOI

10.1109/LED.2007.895376