A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz
Journal article, 2007

We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting RF measurements, the maximum output power was 195 mW at 113 GHz, with a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5%.

Frequency multiplier

heterostructure barrier varactor (HBV)

thermal management

semiconductor diodes

terahertz source

high-power operation

millimeter-wave devices

Author

Josip Vukusic

Chalmers, Applied Physics, Physical Electronics

Tomas Bryllert

Chalmers, Applied Physics, Physical Electronics

Arezoo Emadi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Jan Stake

Chalmers, Applied Physics, Physical Electronics

IEEE Electron Device Letters

0741-3106 (ISSN) 15580563 (eISSN)

Vol. 28 5 340-342

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LED.2007.895376

More information

Created

10/7/2017