Tomas Bryllert
Tomas Bryllert was born in Växjö, Sweden in 1974. He received the degree of M.S. in Physics and the Ph.D. in Semiconductor Physics from Lund University, Sweden in 2000 and 2005 respectively.
In 1997-1998 He spent one year at The University of Waterloo, Ontario, Canada as part of the Masters degree. During 2004 he worked as a guest researcher at the Microwave Electronics Laboratory, Chalmers, Sweden developing frequency multipliers. Building on his research done at Lund University he developed key technology for the company Qunano AB (www.qunano.com) during 2005, (2 patents pending). Starting 2006 he joined the Physical Electronics Laboratory at Chalmers where the main research interest is device and circuit technology for THz frequency multipliers. He is also co-founder and CEO of Wasa Millimeter Wave AB (www.wmmw.se), which is a spin-of company from Chalmers developing and fabricating mm wave products.
In 2006 Dr. Bryllert was awarded a research fellowship in “cross- disciplinary micro/nano science” from the Wallenberg foundation. As a result of this he is presently on leave doing post doc work with the Submillimeter Wave Advanced Technology (SWAT) group at California Institute of Technology/Jet Propulsion Laboratory, Pasadena, USA.
Showing 91 publications
Reliability assessment of GaAs and InP THz mixers and frequency multipliers fabricated on 3" wafers
A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
220-GHz imaging radar with 1 Hz frame rate using an array of homodyne transceivers
A Broadband THz Waveguide-to-suspended Stripline Loop-probe Transition
Optomechanical System Design for Dual-Mode Stand-Off Submillimeter Wavelength Imagers
Status and Prospects of High-Power Heterostructure Barrier Varactor Frequency Multipliers
A 220 GHz 3D imaging radar with sub-cm(3) voxel resolution for security applications
Heterogeneous Integration of Terahertz Diode Circuits
A 220 GHz 3D imaging radar with sub-cm voxel resolution for security applications
Compact 340 GHz homodyne transceiver modules for FMWC imaging radar arrays.
A 474 GHz HBV Frequency Quintupler Integrated on a 20 µm Thick Silicon Substrate
On the development of a quasi-optical system for short and long range standoff imagers
Heterogeneous integration of terahertz electronics
Status and Progress of Schottky Technology Development for SWI and ISMAR
SWI 1200/600 GHz highly integrated receiver front-ends
Sub-millimeter wave diode transceivers
Heterostructure integrated HBV-based frequency quintupler for 500 GHz
Low noise GaAs Schottky TMIC and InP HEMT MMIC based Receivers for the ISMAR and SWI Instruments
Molecular Spectroscopy With a Compact 557-GHz Heterodyne Receiver
Silicon Integrated HBV Frequency Multipliers
Reliability Assessment of Mixers, Multipliers and Low Noise Amplifiers for Space Applications
Monolithically-Integrated Millimetre-Wave Wavelet Transmitter With On-Chip Antenna
Terahertz GaAs Schottky diode mixer and multiplier MIC’s based on e-beam technology
Single Flange 2-port Design For THz Integrated Circuit S-parameter Characterization
300 GHz to 1.2 THz GaAs Schottky membrane TMIC’s for next generation space missions
Wafer bondig for integrated III-V frequency multipliers on silicon
Thermal Analysis of III-V HBV Diode Structures on InP, GaAs, Silicon and Diamond Substrates
Integrated 200–240-GHz FMCW Radar Transceiver Module
Analytical Extraction of a Schottky Diode Model from Broadband S-parameters
Integrated diode technology for THz applications
Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration
Molecular spectroscopy with a compact 557 GHz heterodyne receiver
Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler
Integrated III-V Heterostructure Barrier Varactor frequency tripler on a silicon substrate
Integrated terahertz electronics for imaging and sensing
Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power
A 175 GHz HBV Frequency Quintupler With 60 mW Output Power
Geometry Optimization of THz Sub-harmonic Schottky Mixer Diodes
High Efficiency and Broad-Band Operation of Monolithically Integrated W-Band HBV Frequency Tripler
Development of a 557 GHz GaAs monolithic membrane-diode mixer
Development of planar THz Schottky diodes
HBV MMIC frequency tripler and quintupler for high power THz applications
Submillimeter Wave S-Parameter Characterization of Integrated Membrane Circuits
Development of planar schottky diodes
A monolithic 280 GHz HBV frequency tripler
Time-delay multiplexing of two beams in a terahertz imaging radar
Confocal ellipsoidal reflector system for a mechanically scanned active terahertz imager
A 340 GHz CW non-linear imaging system
A 210 GHz radar system for 3D stand-off detection
Analysis of the High Frequency Spreading Resistance for Surface Channel Planar Schottky Diodes
VNA-calibration and S-parameter characterization of submillimeter wave integrated membrane circuits
Development of a 0.6 THz HBV frequency tripler
340 GHz GaAs monolithic membrane supported Schottky diode circuits
Characterization of GaAs membrane circuits for THz heterodyne receiver applications
Development of integrated submillimeter wave diodes for sources and detectors
Development of a HBV tripler for 0.6 THz
VNA-Calibration and S-Parameter Characterization of Submillimeter Wave Integrated Membrane Circuits
Investigation of passivation methods for HBV diodes
A broadband heterostructure barrier varactor tripler source
An experimental 210 GHz radar system for 3D stand-off detection
High power compact multiplier sources and imaging applications
Compact frequency sources using high-order multipliers
Schottky receivers and graphene for future THz electronics
Development of a Compact 340 GHz Receiver Front-End
Compact 340 GHz Receiver Front-Ends
High power W-band monolithically integrated tripler
High Power Heterostructure Barrier Varactor Quintupler Sources for G-Band Operation
Heterostructure Barrier Varactor Quintuplers for Terahertz Applications
Terahertz technology and applications
Terahertz generation by multiplication
Development of high power HBV multipliers for millimeter wave applications
0.24 W F-Band Heterostructure Barrier Varactor Frequency Tripler
A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz
Optimum barrier thickness study for the InGaAs/InAlAs/AlAs heterostructure barrier varactor diodes
High Efficiency HBV Multipliers
HBV tripler with 21% efficiency at 102 GHz
A High-Power Frequency Tripler for 100 GHz
Design of High Power Heterostructure Barrier Varactor based Multipliers for the W-band
Optimum Barrier Thickness Study for the Heterostructure Barrier Varactror Diode
High efficiency W-band HBV Tripler and Device Reliability Studies
Vertical high-mobility wrap-gated InAs nanowire transistor
Vertical wrap-gated nanowire transistors
The design and realisation of a high-power HBV multiplier source for THz-applications
Design, Fabrication and characterisation of High Power HBV Diodes
High power HBV multipliers for F- and G- band applications
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Showing 3 research projects
Gasification of Biomass, part 2
HBV components for space initial definition