Heterogeneous Integration of Terahertz Diode Circuits
Paper in proceedings, 2016

We present an overview of the research made on integrated diode circuits for terahertz applications. This includes progress on heterogeneous integration of heterostructure barrier varactor multipliers and Schottky diode mixers on silicon substrate. The described technology uses silicon-on-insulator (SOI) substrates, for which accurate and well defined substrate thickness for the microstrip circuitry is obtained.

wafer bonding.

integrated circuits

Schottky diodes

Epitaxial transfer

heterostructure barrier varactors (HBVs)

submillimeter wave

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Vladimir Drakinskiy

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Peter Sobis

Omnisys Instruments

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

GigaHertz Centre

2015 Asia-Pacific Microwave Conference

Vol. 1

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/APMC.2015.7411749

More information

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3/2/2020 3