Heterogeneous Integration of Terahertz Diode Circuits
Paper in proceeding, 2016
We present an overview of the research made on integrated diode circuits for terahertz applications. This includes progress on heterogeneous integration of heterostructure barrier varactor multipliers and Schottky diode mixers on silicon substrate. The described technology uses silicon-on-insulator (SOI) substrates, for which accurate and well defined substrate thickness for the microstrip circuitry is obtained.
wafer bonding.
integrated circuits
Schottky diodes
Epitaxial transfer
heterostructure barrier varactors (HBVs)
submillimeter wave
Author
Aleksandra Malko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Vladimir Drakinskiy
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Peter Sobis
Omnisys Instruments
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
2015 Asia-Pacific Microwave Conference
Vol. 1
Areas of Advance
Information and Communication Technology
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1109/APMC.2015.7411749