Aleksandra Malko
Showing 23 publications
Status and Prospects of High-Power Heterostructure Barrier Varactor Frequency Multipliers
Heterogeneous Integration of Terahertz Diode Circuits
Status and Progress of Schottky Technology Development for SWI and ISMAR
A 474 GHz HBV Frequency Quintupler Integrated on a 20 µm Thick Silicon Substrate
Silicon Integrated HBV Frequency Multipliers for THz Applications
Heterogeneous integration of terahertz electronics
Effect of bismuth on InAs films grown on GaAs substrates by MBE
Heterostructure integrated HBV-based frequency quintupler for 500 GHz
Silicon Integrated HBV Frequency Multipliers
Wafer bondig for integrated III-V frequency multipliers on silicon
Fabrication of Integrated HBV Multipliers for THz Generation
Thermal Analysis of III-V HBV Diode Structures on InP, GaAs, Silicon and Diamond Substrates
Integrated diode technology for THz applications
Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler
High Efficiency and Broad-Band Operation of Monolithically Integrated W-Band HBV Frequency Tripler
A 175 GHz HBV Frequency Quintupler With 60 mW Output Power
Integrated III-V Heterostructure Barrier Varactor frequency tripler on a silicon substrate
Integrated terahertz electronics for imaging and sensing
Development of integrated submillimeter wave diodes for sources and detectors
Investigation of passivation methods for HBV diodes
International Symposium on Terahertz Science and Technology between Japan and Sweden
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