Integrated III-V Heterostructure Barrier Varactor frequency tripler on a silicon substrate
Paper in proceedings, 2012

We report on the RF characterization of a monolithically integrated III-V H eterostructure Barrier Varactor (HBV) frequency tripler on a silicon substrate. A process of a low-temperature plasma-assisted bonding was introduced to transfer an InGaAs/InAlAs/AlAs H BV onto a silicon wafer. The frequency of operation for the presented frequency tripler is in the range of 96-108GHz. The maximum output power measured for the demonstrated device is 66mW, which corresponds to an efficiency of 10%.

W-band

Epitaxial transfer

frequency tripler

heterostrucutre barrier varactor (HBV)

millimeter-wave

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 Oct. 2012.

516-519

Areas of Advance

Information and Communication Technology

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4673-2302-4

More information

Created

10/7/2017