Integrated III-V Heterostructure Barrier Varactor frequency tripler on a silicon substrate
Paper in proceeding, 2012
We report on the RF characterization of a monolithically integrated III-V H eterostructure Barrier Varactor (HBV) frequency tripler on a silicon substrate. A process of a low-temperature plasma-assisted bonding was introduced to transfer an InGaAs/InAlAs/AlAs H BV onto a silicon wafer. The frequency of operation for the presented frequency tripler is in the range of 96-108GHz. The maximum output power measured for the demonstrated device is 66mW, which corresponds to an efficiency of 10%.
W-band
Epitaxial transfer
frequency tripler
heterostrucutre barrier varactor (HBV)
millimeter-wave
Author
Aleksandra Malko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
7th European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, 29-30 Oct. 2012.
516-519
978-1-4673-2302-4 (ISBN)
Areas of Advance
Information and Communication Technology
Infrastructure
Nanofabrication Laboratory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-1-4673-2302-4