Heterostructure integrated HBV-based frequency quintupler for 500 GHz
Paper in proceedings, 2014

We present a heterogeneous integrated frequency quintupler based on heterostructure barrier varactor (HBV) operating in the frequency range from 440 GHz to 490 GHz. The HBV material structure was transferred onto silicon on insulator (SOI) using low temperature plasma activated wafer bonding. The top layer of the SOI has a high resistivity (10,000 Ωcm) and is 20 μm thick. Thus, not only minimized substrate losses, but also an accurate and uniform thickness of the quintupler chip is obtained. The maximum output power for this device is 6 mW at 472.5 GHz.

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

38th Workshops on Compound Semiconductors Devices and Integrated Circuits

11 - 12

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Control Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/8/2017