Heterostructure integrated HBV-based frequency quintupler for 500 GHz

Paper in proceeding, 2014

We present a heterogeneous integrated frequency quintupler based on heterostructure barrier varactor (HBV) operating in the frequency range from 440 GHz to 490 GHz. The HBV material structure was transferred onto silicon on insulator (SOI) using low temperature plasma activated wafer bonding. The top layer of the SOI has a high resistivity (10,000 Ωcm) and is 20 μm thick. Thus, not only minimized substrate losses, but also an accurate and uniform thickness of the quintupler chip is obtained. The maximum output power for this device is 6 mW at 472.5 GHz.