Thermal Analysis of III-V HBV Diode Structures on InP, GaAs, Silicon and Diamond Substrates
Paper in proceeding, 2013
Thermal analysis of In0.53Ga0.47As and GaAs Heterostructure Barrier Varactors diodes on InP, GaAs, silicon and diamond substrates are presented. The physical dimensions of the analysed structures correspond to the dimensions of a high power integrated HBV frequency multipliers for W-band (70 – 110 GHz). It is shown that material transfer to substrates with higher thermal conductivity will reduce thermal resistance by 21 % and approximately 50 % for In0.53Ga0.47As and GaAs HBVs, respectively. Thus, an enhanced thermal handling capability of the HBV multiplier sources can be obtained.
Author
Aleksandra Malko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Aik-Yean Tang
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
21622027 (ISSN) 21622035 (eISSN)
1-2Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/IRMMW-THz.2013.6665403