Thermal Analysis of III-V HBV Diode Structures on InP, GaAs, Silicon and Diamond Substrates
Paper in proceedings, 2013

Thermal analysis of In0.53Ga0.47As and GaAs Heterostructure Barrier Varactors diodes on InP, GaAs, silicon and diamond substrates are presented. The physical dimensions of the analysed structures correspond to the dimensions of a high power integrated HBV frequency multipliers for W-band (70 – 110 GHz). It is shown that material transfer to substrates with higher thermal conductivity will reduce thermal resistance by 21 % and approximately 50 % for In0.53Ga0.47As and GaAs HBVs, respectively. Thus, an enhanced thermal handling capability of the HBV multiplier sources can be obtained.

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Aik-Yean Tang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

International Conference on Infrared, Millimeter, and Terahertz Waves

1-2

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/IRMMW-THz.2013.6665403

More information

Created

10/7/2017