Wafer bondig for integrated III-V frequency multipliers on silicon

Paper in proceeding, 2013

In this paper low temperature (LT) plasma assisted wafer bonding for integration of an InGaAs/InAlAs/AlAs epitaxial strucutre is utilised to fabricate a heterostrucutre barrier varactor (HBV). Due to its nonlinear properties the HBV generates only odd harmonics of the input signal, thus the device can be used as a frequency multiplier. The silicon serves as the substrate for the microstrip circuitry.