Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler
Journal article, 2013

e present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature plasma-assisted bonding. The presented multiplier operates in the W-band (90–110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9% 3-dB bandwidth.

Frequency multipliers

millimeter-wave diodes

silicon

heterogeneous integration

III–V semiconductors

wafer bonding

heterostructure barrier varactors

integrated circuits

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 34 7 843 - 845

Areas of Advance

Information and Communication Technology

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LED.2013.2262131

More information

Created

10/8/2017