Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler
Journal article, 2013
e present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature plasma-assisted bonding. The presented multiplier operates in the W-band (90–110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9% 3-dB bandwidth.
III–V semiconductors
integrated circuits
Frequency multipliers
silicon
heterogeneous integration
wafer bonding
millimeter-wave diodes
heterostructure barrier varactors
Author
Aleksandra Malko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 34 7 843 - 845 6530605Areas of Advance
Information and Communication Technology
Infrastructure
Myfab (incl. Nanofabrication Laboratory)
Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/LED.2013.2262131