A 474 GHz HBV Frequency Quintupler Integrated on a 20 µm Thick Silicon Substrate
Journal article, 2015

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (x5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 ┬Ám) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.

submillimetre waves

epitaxial transfer

frequency multipliers

heterostructure barrier varactors

Compound semiconductors

wafer bonding

THz sources

monolithic integrated circuits

submillimeter wave diodes

Author

Aleksandra Malko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 5 1 85-91 6998071

Areas of Advance

Information and Communication Technology

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TTHZ.2014.2378793

More information

Created

10/7/2017