A 474 GHz HBV Frequency Quintupler Integrated on a 20 µm Thick Silicon Substrate
Journal article, 2015
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (x5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 µm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.
submillimetre waves
epitaxial transfer
frequency multipliers
heterostructure barrier varactors
Compound semiconductors
wafer bonding
THz sources
monolithic integrated circuits
submillimeter wave diodes
Author
Aleksandra Malko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IEEE Transactions on Terahertz Science and Technology
2156-342X (ISSN) 21563446 (eISSN)
Vol. 5 1 85-91 6998071Areas of Advance
Information and Communication Technology
Infrastructure
Kollberg Laboratory
Nanofabrication Laboratory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TTHZ.2014.2378793