Development of a HBV tripler for 0.6 THz
Paper in proceeding, 2010
We report on the progress of the design of a HBV frequency tripler for 0.6 THz. The diode is based on the InGaAs/InAlAs/AlAs on InP material system, and the diode material and geometry has been optimised with regards to conversion efficiency. In designing the diode, it was found that self heating is the major limiting factor due to the poor thermal conductivity of InGaAs. The resulting HBV is a two-mesa diode from a three-barrier material, with a mesa area of 6×3 μm2, and is estimated to have a 6-7% conversion efficiency and 100 - 150 K self heating at an input power of 30 mW.
Author
Johanna Liljedahl
Chalmers, Applied Physics, Physical Electronics
Tomas Bryllert
Chalmers, Applied Physics, Physical Electronics
Josip Vukusic
Chalmers, Applied Physics, Physical Electronics
Jan Stake
Chalmers, Applied Physics, Physical Electronics
21st International Symposium on Space Terahertz Technology 2010, ISSTT 2010; Oxford; United Kingdom; 23 March 2010 through 25 March 2010
399-404
978-161782362-6 (ISBN)
Areas of Advance
Information and Communication Technology
Subject Categories
Materials Engineering
Other Engineering and Technologies
Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-161782362-6