Development of a HBV tripler for 0.6 THz
Paper i proceeding, 2010

We report on the progress of the design of a HBV frequency tripler for 0.6 THz. The diode is based on the InGaAs/InAlAs/AlAs on InP material system, and the diode material and geometry has been optimised with regards to conversion efficiency. In designing the diode, it was found that self heating is the major limiting factor due to the poor thermal conductivity of InGaAs. The resulting HBV is a two-mesa diode from a three-barrier material, with a mesa area of 6×3 μm2, and is estimated to have a 6-7% conversion efficiency and 100 - 150 K self heating at an input power of 30 mW.

Författare

Johanna Liljedahl

Chalmers, Teknisk fysik, Fysikalisk elektronik

Tomas Bryllert

Chalmers, Teknisk fysik, Fysikalisk elektronik

Josip Vukusic

Chalmers, Teknisk fysik, Fysikalisk elektronik

Jan Stake

Chalmers, Teknisk fysik, Fysikalisk elektronik

21st International Symposium on Space Terahertz Technology 2010, ISSTT 2010; Oxford; United Kingdom; 23 March 2010 through 25 March 2010

399-404

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Materialteknik

Annan teknik

Elektroteknik och elektronik

ISBN

978-161782362-6