Optimum Barrier Thickness Study for the Heterostructure Barrier Varactror Diode
Paper in proceeding, 2006
This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes, to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the conduction current is investigated for different biases and device temperatures. We found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.
HBV
Heterostructure barrier varactor
Frequency multipliers
Author
Arezoo Emadi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
WOCSDICE 2006
1652-0769 (ISSN)
55-57Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Infrastructure
Nanofabrication Laboratory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering