Optimum Barrier Thickness Study for the Heterostructure Barrier Varactror Diode
Paper in proceedings, 2006

This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes, to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the conduction current is investigated for different biases and device temperatures. We found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.

HBV

Heterostructure barrier varactor

Frequency multipliers

Author

Arezoo Emadi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Tomas Bryllert

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Microwave and Terahertz Technology

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

WOCSDICE 2006

1652-0769 (ISSN)

55-57

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017