Terahertz GaAs Schottky diode mixer and multiplier MIC’s based on e-beam technology
Paper in proceedings, 2013

We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.

passive circuits

Schottky diodes

multipliers

membrane

submillimeter wave mixers

Author

Vladimir Drakinskiy

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Tomas Bryllert

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

10928669 (ISSN)

6562606

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Nano Technology

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/ICIPRM.2013.6562606

ISBN

978-1-4673-6131-6

More information

Created

10/6/2017