Terahertz GaAs Schottky diode mixer and multiplier MIC’s based on e-beam technology
Paper i proceeding, 2013

We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.

passive circuits

Schottky diodes

multipliers

membrane

submillimeter wave mixers

Författare

Vladimir Drakinskiy

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

10928669 (ISSN)

6562606

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/ICIPRM.2013.6562606

ISBN

978-1-4673-6131-6